Improving efficiency and reducing cost are the consistent efforts of photovoltaic industry. In recent years, a series of technological innovations have been made in the links from silicon wafer, battery to module, which have continuously improved the conversion efficiency of photovoltaic power generation and reduced the cost of kilowatt hour. In this context, it is particularly important for photovoltaic industry to improve and optimize the silicon crystal growth technology such as single crystal rod pulling, polycrystalline and quasi single crystal ingots, and produce more high-quality and lower cost silicon rods and ingots, so as to enhance competitiveness and realize the grid access of power generation side parity as soon as possible.

The single crystal rod pulling technology is in the process of transition from multiple loading and drawing (RCZ) to continuous drawing (CCZ). As CCZ needs high-quality granular polysilicon raw materials, the promotion of CCZ will have a profound impact on the production pattern of PV grade polysilicon in China. CCZ also needs a quartz crucible with a life of 500 hours, and the localization of high-quality quartz crucible is also an important topic.

CCZ can effectively reduce the pulling time, crucible cost and energy consumption of single crystal rod, and the resistivity, distribution and quality of crystal rod produced by CCZ are more uniform, narrower and higher. In addition, the automation and intelligence of the single crystal rod pulling production is conducive to improving the production capacity and optimizing the consistency of the crystal growth process. In April 2018, GCL poly announced that it would build 20GW CCZ single crystal production capacity in Qujing, Yunnan Province. In August 2018, Longji announced the signing of CCZ efficient single crystal cooperation agreement with aixu solar.

Polycrystalline ingot process is upgrading from G6 ingot furnace to G7 or even G8 technology. While greatly increasing production capacity, continuous optimization of hot area, auxiliary materials, casting process and equipment is required. Through advanced nucleation technology and high purity crucible, conversion efficiency can be improved and resistivity distribution can be optimized. By reducing dislocation density, oxygen content and narrower resistivity, the cell efficiency can also be improved. Gallium doping in ingot can effectively solve the problem of light decay of polycrystalline perc battery.

Ingot type single crystal has the advantages of high minority carrier life, low dislocation density and low cost, which is an important development direction of silicon crystal manufacturing. GCL Poly has started to accept orders for ingot single crystal silicon chips in 2018. In addition, the direct silicon technology has lower silicon consumption and energy consumption. In 2018, the average efficiency of high-efficiency batteries produced with direct silicon has reached 20.5%, which has also attracted the general attention of the photovoltaic industry. The n-type single crystal battery has the advantages of high minority carrier life, high tolerance for metal impurities, and low light decay. The production technology of n-type single crystal is worthy of attention.

The 2018 photovoltaic single crystal rod pulling, polycrystalline and quasi single crystal ingot Technology Forum will be held in Hangzhou, Zhejiang Province on October 16, 2018. The meeting will discuss the prospect of photovoltaic industry and the market analysis of monocrystalline and polycrystalline wafers, the process optimization and development prospect of monocrystalline, polycrystalline and ingot like monocrystalline and direct process silicon wafers, the technical advantages and application prospect of continuous crystal casting (CCZ), the demand analysis of granular polycrystalline silicon and high-performance crucible by CCZ, the safe production and intelligent manufacturing of polycrystalline ingots, and the high performance of monocrystalline and polycrystalline ingots Auxiliary materials, etc.

Notice of relevant matters is as follows:

1、 Seminar topics:
1. Prospect of photovoltaic industry and market analysis of monocrystalline silicon and polycrystalline silicon
2. Development prospect of single crystal, polycrystalline, ingot type single crystal and direct method silicon wafer
3. Technical advantages and application prospect of CCZ
4. CCZ demand analysis for granular polysilicon and high performance crucible
5. FBR fluidized bed technology to produce high quality granular silicon
6. Production technology and cost control of n-type single crystal
7. Optimization of single crystal rod drawing process and reduction of oxygen and carbon content
8. Advanced auxiliary materials for single crystal rod pulling: high purity quartz, graphite and carbon / carbon crucible
9. Upgrading of polycrystalline ingot Technology: increasing feeding capacity, reducing energy consumption and dislocation
10. Study on the mechanism of high efficient crystallization and nucleation of polycrystalline ingots
11. High purity quartz and advanced in furnace coating technology to reduce impurities in polycrystalline ingots
12. Production technology of single crystal and polycrystalline perfectly matched with diamond wire slice and perc process
13. Production of high efficiency polycrystalline silicon wafer by direct silicon wafer technology and its battery application
14. Competitiveness analysis and technical optimization potential of similar single crystal ingots
15. Safety production and intelligent manufacturing of single crystal rod and polycrystalline ingot
16. Solve the problem of light decay of single crystal battery and polycrystalline battery from the perspective of silicon crystal manufacturing

2、 Time: October 16, 2018
3、 Location: Hangzhou
4、 Registration time: 16:00-21:00, October 15, 2018
5、 Please contact:
Manager Chen: 021-68726606-109 / 13701609248 (wechat same number)
Joanna,u chen@
Or fill in the form to register:

Conference fee: 3200 yuan / person, 2900 yuan / person for team application (same company ≥ 3 persons); English service fee of 2000 yuan for foreign guests
The measure of area: 500m2

• Truename:Manager Chen
• Mobile:13701609248
• E-mail:Joanna_chen@chemweekly.com
• QQ:410192892
• Address:Xinjinqiao Road, Pudong New Area, Shanghai

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